Higher silicon content is confirmed by FTIR measurement results, which are presented in the next section, where the small intense peaks of oxygen deficiency that is, Si-Si bond at 653-670 [cm.sup.-1], and suboxides
around 988-1000 [cm.sup.-1] are observed [30, 31].
These are the methane, nitrogen suboxide
, sulphur hexafluoride and others;
Ebonex technology is based on a titanium suboxide
material which has a unique combination of metallic-like electrical conductivity along with the characteristic high corrosion resistance of ceramics.
Besides carbon dioxide, methane emissions dropped 1.4% to 1.36 million tons, carbon suboxide
emissions 5.5% to 64,000 tons, and hydrofluorocarbon emissions 14.1% to 11,600 tons.
An intermediary reaction step may occur, forming boron suboxide
[B.sub.2][O.sub.2], which is highly volatile.
Nevertheless, too strong of an interaction generates the Ti[O.sub.2] compound as a suboxide
at an interface, which is highly resistant to reduction .
Pasquarello, "Electronic and dielectric properties of a suboxide
interlayer at the silicon-oxide interface in MOS devices," Surface Science, vol.
132.4 and 134.4 eV, while the Sr[O.sub.1-[delta]] suboxide
was observed at about 133.2 and 135.1 eV , as seen in Figure 8.
Merck Patent GmbH has been granted a patent for an effect pigment, which is a silver-white effect pigment, a colored interference pigment or an effect pigment having a non-flake appearance comprising an Si[O.sub.2] flake substrate having a thickness of from 50 nm to 150 nm, coated with only one layer of a metal oxide, metal oxide hydrate, metal suboxide
, or metal fluoride or only one layer of a mixture of two or more of these materials.
In contrast, nitrous suboxide
increased 14%, and hydrofluorocarbons 18.4%, the report said.
During the cosputtering of the GeRSiO layer, part of the incorporated Ge atoms form chemical bonds with oxygen atoms, thus leading to a substoichiometric thin film composed of Si suboxide
(SiOJ and Ge suboxide
PECVD hydrogenated intrinsic amorphous silicon suboxide
(a-Si[O.sub.x]:H(i)) thin films are emerging as an alternative to replace a-Si:H(i) as passivation layer in HET solar cells.