suboxide


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sub·ox·ide

(sŭb-ok'sīd),
That member of a series of oxides containing the least oxygen.
Synonym(s): protoxide

suboxide

(sŭb-ŏk′sīd′)
n.
An oxide containing a relatively small amount of oxygen.

suboxide

(sŭb-ŏk′sīdz)
In a series of oxides, one that contains the smallest amount of oxygen.
References in periodicals archive ?
Higher silicon content is confirmed by FTIR measurement results, which are presented in the next section, where the small intense peaks of oxygen deficiency that is, Si-Si bond at 653-670 [cm.sup.-1], and suboxides around 988-1000 [cm.sup.-1] are observed [30, 31].
Ebonex technology is based on a titanium suboxide material which has a unique combination of metallic-like electrical conductivity along with the characteristic high corrosion resistance of ceramics.
Besides carbon dioxide, methane emissions dropped 1.4% to 1.36 million tons, carbon suboxide emissions 5.5% to 64,000 tons, and hydrofluorocarbon emissions 14.1% to 11,600 tons.
An intermediary reaction step may occur, forming boron suboxide [B.sub.2][O.sub.2], which is highly volatile.
Nevertheless, too strong of an interaction generates the Ti[O.sub.2] compound as a suboxide at an interface, which is highly resistant to reduction [89].
Pasquarello, "Electronic and dielectric properties of a suboxide interlayer at the silicon-oxide interface in MOS devices," Surface Science, vol.
132.4 and 134.4 eV, while the Sr[O.sub.1-[delta]] suboxide was observed at about 133.2 and 135.1 eV [38], as seen in Figure 8.
Merck Patent GmbH has been granted a patent for an effect pigment, which is a silver-white effect pigment, a colored interference pigment or an effect pigment having a non-flake appearance comprising an Si[O.sub.2] flake substrate having a thickness of from 50 nm to 150 nm, coated with only one layer of a metal oxide, metal oxide hydrate, metal suboxide, or metal fluoride or only one layer of a mixture of two or more of these materials.
In contrast, nitrous suboxide increased 14%, and hydrofluorocarbons 18.4%, the report said.
During the cosputtering of the GeRSiO layer, part of the incorporated Ge atoms form chemical bonds with oxygen atoms, thus leading to a substoichiometric thin film composed of Si suboxide (SiOJ and Ge suboxide (GeOy).
PECVD hydrogenated intrinsic amorphous silicon suboxide (a-Si[O.sub.x]:H(i)) thin films are emerging as an alternative to replace a-Si:H(i) as passivation layer in HET solar cells.