silicon dioxide


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silicon

 [sil´ĭ-kon]
a chemical element, atomic number 14, atomic weight 28.086, symbol Si. (See Appendix 6.)
silicon dioxide silica.

sil·i·ca

(sil'i-kă),
The chief constituent of sand, hence of glass.
[Mod. L. fr. L. silex (silic-), flint]

silicon dioxide

n.
Silica.

sil·i·ca

(sil'i-kă)
The chief constituent of sand, hence of glass.
Synonym(s): silicon dioxide.
[Mod. L. fr. L. silex (silic-), flint]

sil·i·ca

(sil'i-kă)
The chief constituent of sand, hence of glass.
Synonym(s): silicon dioxide.
[Mod. L. fr. L. silex (silic-), flint]
References in periodicals archive ?
New gate oxide materials need to be identified to address the electric field and electron tunneling limits foreseen with silicon dioxide.
provides Silicon dioxide market situation overview and supplies with a list of Silicon dioxide manufacturers and suppliers worldwide
nterestingly it's not the silicon dioxide particles that do the cooling, rather the cooling occurs as the result of a nanoscale electromagnetic effect created on the surface of these 'sand' particles.
However, the application of silicon dioxide (SiO2) nanoparticles decreases the undesired effects of salinity on germination and the root and stem length of the crop.
Silicon, Silicon nitride, Silicon dioxide, Niobium, Niobium nitride, as well as deeper structures in e.
According to researchers, the new nano-sized tip wears away at the rate of one atom per micrometer of sliding on a substrate of silicon dioxide, much lower than that for a silicon oxide tip which represents the current state-of-the-art.
A unique type of amorphous silicon dioxide as viscosity modifier for high performance elastomers," G.
The NCA, NCB, NCC, NCD and NCE devices are available with a combination silicon dioxide/silicon nitride dielectric, or, for critical microwave or high-frequency applications in which low dielectric absorption is required, with a silicon dioxide dielectric.
Without satisfactory replacements for silicon dioxide, the current insulator of choice, the potential for electrical cross talk between such closely packed wires will be enormous.
As Its name Implies, electron-beam evaporation proceeds by heating the surface of a suitable material - often silicon dioxide or hafnium dioxide - to cause it to melt and then evaporate into a high-vacuum chamber containing a substrate to be coated.
The second form, chemical penetration, is caused by the reaction between iron oxide (FeO) and silicon dioxide (Si[O.
Patent number 7,372,065 for employing commonly used semiconductor materials copper and silicon dioxide to form Programmable Metallization Cell (PMC) memory devices.