SWCNTs were obtained by density gradient ultracentrifugation of mixed SWCNT sample with a mean diameter of 1.4 nm produced by the arc-discharge method (ArcSO type, Meijo Nano Carbon Co.).
The first is related to the use of peak intensity ratios (RBMs or high-energy mode from metallic and semiconducting
SWNTs) to evaluate the selectivity of semiconducting
or metallic SWNTs in bulk products.
(13.0) and (14.0) zigzag SWCNTs are studied in order to overcome the difficulties in characterizing multi-vacancy defects induced by the horizontal direction changes; the energetics and the electronic structures of semiconducting
Single-Walled Carbon Nanotubes (SWCNTs).
The band gaps have been examined at different symmetric k-points and found to be semiconducting
. The band gap at the most symmetric point G is observed to be 1.11 eV but 0.84 eV at another symmetric point Z.
“Our data clearly indicates the semiconducting
nature of Pb nanopowder and its direct bandgap,” the researchers comment, adding: “Further research related to electrical behaviors, battery performances etc.
However, synthesis of SWCNTs by currently known methods usually results in a mixture of semiconducting
and metallic nanotubes.
Superthin slices of semiconducting
silicon and components made of magnesium perform the hardware and semiconducting
Engineered nanomaterials, prized for their unique semiconducting
properties, are already prevalent in everyday consumer products, from sunscreens, cosmetics, and paints to textiles and solar batteries.
Rectifiers and semiconducting
diodes made of silicon carbide have been available for 10 years.
He said the new technique could yield semiconducting
and piezoelectric nanowire and nanotube arrays hundreds of metres long, with nanowire diameters less than 15?nm, or nanometer, which equals to one billionth of a metre.
Alchimer has developed a technology which it calls electrografting, an electrochemical process that enables the growth of extremely high quality polymer and metal thin films on both conducting and semiconducting
surfaces, which it says will reduces overall cost of ownership for high-aspect-ratio through-silicon vias (TSV) metallisation by up to two-thirds compared to conventional dry processes and shorten time to market.
Sixteen chapters discuss the historical perspective, growth techniques, thermodynamic and kinetic aspects of nanowire growth, modeling of nanowire growth, semiconducting
nanowires, phase change materials, metallic nanowires, oxide nanowires, other nanowires, applications in electronics, applications in optoelectronics, applications in sensors, and applications in the energy sector.