(redirected from pseudomorphic)
Also found in: Dictionary, Encyclopedia.


A mineral found crystallized in a form that is not proper to it but to some other mineral.
[pseudo- + G. morphē, form]
Farlex Partner Medical Dictionary © Farlex 2012
References in periodicals archive ?
[30] Datasheet Avago Technologies, "ATF-54143 low noise enhancement mode pseudomorphic HEMT in a surface mount plastic package," Document Number AV02-0488EN, Datasheet Avago Technologies, San Jose, Calif, USA, 2012.
Camacho Perez, "Modeling and simulation of pseudomorphic HEMTs for analog circuit design and analysis," in Delphi Automotive Systems/Delco Electronics, pp.
As the original and/or recrystallized pseudomorphic structures have preserved without further dissolution, it can be expected that the fossilization has been a rapid, almost instant process.
(AWR(TM)) and WIN Semiconductors Corporation (WIN) have introduced a process design kit (PDK) supporting WIN's power pseudomorphic High Electron Mobility Transistor (pHEMT) gallium arsenide (GaAs) foundry process.
In this pseudomorphic capital of the earth the sky has become a sarcophagus of lime eating up moment by moment its deliriously moving population possessed as they are by reverential mirages of speed.
Figure 7 shows a two-stage, 6 to 18-GHz LNA with built-in pseudomorphic HEMT technology which has a gain of 17 dB and a noise figure of 2.5 dB across the band.
The evolution of the reflection high-energy electron diffraction (RHEED) pattern during MBE deposition indicated that the InGaAs was pseudomorphic to GaAs, thus assuring a high crystal quality of the structure.
Still, some contend that, in addition to the patriarchal condescension implicit in the Krasner/Pollock comparison, it is also "pseudomorphic," in that a small visual episteme is being compared to a sprawling allover that refuses to coalesce into a stable pattern.
As you conclude in your note, without reasonable evidence of pseudomorphic replacement of pyrite by gold, a logical conclusion is that the Russian crystals are cast.
The new PAs use a 0.15 [micro]m gate length GaAs pseudomorphic high electron mobility transistor (PHEMT) device technology and are well suited for wireless communications applications.
The Hughes/GE team is developing and validating several processes: continuation of the signal and power MESFET process work begun during Phase 1; 0.25-[micro-m] pseudomorphic high electron mobility transistor processes for several frequency ranges to improve the performance of amplifiers, VCOs and mixers; and an HBT process for high-power amplifiers at X-band.