genesic

genesic

adjective Referring to reproduction; i.e., reproductive, generative. It is not used in the working medical parlance.
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Dulles, VA, November 21, 2014 --(PR.com)-- GeneSiC Semiconductor, a pioneer and global supplier of a broad range of Silicon Carbide (SiC) power semiconductors today announces the immediate availability of Gate Driver evaluation board and has expanded its design support for the industry's lowest loss switches - the SiC Junction Transistor (SJT) - with a fully-qualified LTSPICE IV model.
GeneSiC's fully isolated GA03IDDJT30-FR4 Gate driver board takes in 0/12V and a TTL signal to optimally condition the voltage/current waveforms required to provide small rise/fall times, while still minimizing the continuous current requirement for keeping the Normally-OFF SJT conducting during the on-state.
GeneSiC's SPICE models are compared to the experimentally measured data on all device datasheets and are applicable to all 1200 V and 1700 V SiC Junction Transistors released.
GeneSiC's SJTs are capable of delivering switching frequencies that are more than 15 times higher than IGBT-based solutions.
The first SiC-based device to reach market is the Ultra-high-voltage Silicon Carbide Thyristor (SiC Thyristor), developed by GeneSiC Semiconductor Inc., Dulles, Va., with support from Sandia National Laboratories, Albuquerque, N.M., and partners.
The report also profiles companies that are expected to remain active in the expansion of global SiC & GaN power semiconductor market through 2026, which include VisIC Technologies Ltd, Panasonic Corporation, NXP Semiconductors N.V., GaN Systems Inc., Exagan S.A.S, Cambridge Electronics, Avogy, Inc., Vincotech GmbH, United Silicon Carbide Inc., STMicroelectronics N.V., Raytheon Company, Monolith Semiconductor Inc., Genesic semiconductor Inc., Transform, Inc., Alpha & Omega Semiconductor, Renesas Electronics, SEMIKRON International GmbH, Danfoss A/S, Microsemi Corporation, Wolfspeed, Inc., ROHM Semiconductor, Global Power Technologies Group, Fuji Electric Systems Co., Ltd, Fairchild Semiconductor, and Infineon Technologies.
Competition Tracking The report also profiles companies that are expected to remain active in the expansion of global SiC & GaN power semiconductor market through 2026, which include VisIC Technologies Ltd, Panasonic Corporation, NXP Semiconductors N.V., GaN Systems Inc., Exagan S.A.S, Cambridge Electronics, Avogy, Inc., Vincotech GmbH, United Silicon Carbide Inc., STMicroelectronics N.V., Raytheon Company, Monolith Semiconductor Inc., Genesic semiconductor Inc., Transform, Inc., Alpha & Omega Semiconductor, Renesas Electronics, SEMIKRON International GmbH, Danfoss A/S, Microsemi Corporation, Wolfspeed, Inc., ROHM Semiconductor, Global Power Technologies Group, Fuji Electric Systems Co., Ltd, Fairchild Semiconductor, and Infineon Technologies.
Dulles, VA, October 29, 2014 --(PR.com)-- GeneSiC Semiconductor, a pioneer and global supplier of a broad range of Silicon Carbide (SiC) power semiconductors today announces the immediate availability of a family of low on-resistance 1700V and 1200 V SiC Junction Transistors in TO-247 packages.
SiC Junction Transistors (SJT) offered by GeneSiC exhibit ultra-fast switching capability (similar to that of SiC MOSFETs), a square reverse biased safe operation area (RBSOA), as well as temperature-independent transient energy losses and switching times.
GeneSiC's SJTs offer extremely low conduction losses at rated currents as superior turn-off losses in power circuits.
The devices are immediately available from GeneSiC's Authorized Distributors.
These include companies such as Infineon Technologies, Fairchild Semiconductor, Fuji Electric Systems Co., Ltd, Global Power Technologies Group, ROHM Semiconductor, Wolfspeed, Inc., Microsemi Corporation, Danfoss A/S, SEMIKRON International GmbH, Renesas Electronics, Alpha & Omega Semiconductor, Transform, Inc., Genesic semiconductor Inc., Monolith Semiconductor Inc., Raytheon Company, STMicroelectronics N.V., United Silicon Carbide Inc., Vincotech GmbH, Avogy, Inc., Cambridge Electronics, Exagan S.A.S, GaN Systems Inc., NXP Semiconductors N.V., Panasonic Corporation, and VisIC Technologies Ltd.