epitaxy


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Related to epitaxy: Molecular beam epitaxy

ep·i·tax·y

(ep'i-tak'sē),
The growth of one crystal in one or more specific orientations on the substrate of another kind of crystal, with a close geometric fit between the networks in contact; seen in the alternating layers of different composition in stones from the kidney and gallbladder, indicating an abrupt change of composition during formation.
[epi- + G. taxis, arrangement]
Farlex Partner Medical Dictionary © Farlex 2012
References in periodicals archive ?
Osipov, "New method for growing silicon carbide on silicon by solid-phase epitaxy: Model and experiment," Physics of the Solid State, vol.
Huang, "Direct-current sputter epitaxy of Si and its application to fabricate [n.sup.+]-emitters for crystalline-Si solar cells," Japanese Journal of Applied Physics, vol.
Hardtdegen, InxGa1-xAs/InP selective area metal-organic vapor phase epitaxy for non-magnetic semiconductor spintronics, Journal of Crystal Growth, vol.
Cross-sectional TEM (XTEM) images are taken to check whether epitaxy has taken place and to investigate intragrain defects in the epilayers.
The editors have organized the main body of the text in twelve chapters devoted to defects in germanium, hydrogen in Ge, epitaxy of Ge layers on blanket and patterened Si(001) for nanoelectronics and optoelectronics, and a wide variety of other related subjects.
Such innovations are only the most obvious indication of the progress that has taken place in the technique of epitaxy since it was introduced to SpringThorpe more than five decades ago.
13, 2012 (CENS) -- San'an Optoelectronics, mainland China's largest LED (light emitting diode) epitaxy manufacturer, announced yesterday (Nov.
11 June 2012 a[euro]" British semiconductor wafer products supplier IQE Plc (LON:IQE) said on Monday it had wrapped up the takeover of US sector company RF Micro Devices Inca[euro](tm)s (NASDAQ:RFMD) entire molecular beam epitaxy (MBE) epi-wafer production business.
TDI develops hydride vapour phase epitaxy (HVPE) technology for use in the production of high brightness LEDs.
Silicon-germanium (SiGe) and silicon (Si) strained-layer epitaxy are considered old solutions to the engineering of semiconductor devices, but using SiGe and Si in a production system has only recently become a practical reality.
The group has employed molecular beam epitaxy to create first a quantum dot structure made of InAs (indiaum arsenide)/GaAs (gallium arsenide) and then a metal mask with a 0.2-micron-diameter opening in the structure as well as an electrode to which voltage can be applied.