dopant


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dopant

 [do´pant]
an impurity purposely added, as to a laser crystal or a semiconductor, during manufacturing in order to create a desired characteristic.
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References in periodicals archive ?
Li, Improved microwave magnetic and attenuation properties due to the dopant V2O5 in W-type barium ferrites, J.
Separately, 5 x [10.sup.-3] mol of Zn[(N[O.sub.3]).sub.2] x 6[H.sub.2]O was dissolved in distilled water (50 mL) at pH 6, and the dopant of Eu[(N[O.sub.3]).sub.3] x 5[H.sub.2]O or Pr[(N[O.sub.3]).sub.3] x 6[H.sub.2]O was added to the aqueous solutions containing [Zn.sup.2+] ions.
The HC1-SDS binary dopant system was used to extend the life of PANI and its nanocomposites in doped form since conventional dopants such as HCl diffuse out of the polymer during the drying process, leaving behind an electrically nonconducting film.
We note that the band edge peak intensity decreases dramatically, while an obvious increase in the broadband emission is seen with increasing Ag dopant concentration.
Jeong, "Statistical variability study of random dopant fluctuation on gate-all-around inversion-mode silicon nanowire field-effect transistors," Applied Physics Letters, vol.
We have argued that the number of localized states--empty and occupied--and its electron distribution is directly related to the electron configuration of the dopant p orbitals; thus, we finally examined an element which is in the same oxygen group, the sulfur.
To understand the effect of Zn concentrations at dopant concentrations, AFM images at 0.004 M and 0.008M are recorded and is shown in Figure-7 (a-f).
2(a) and 2(b) denote regions of high electrostatic potential generated by individual dopant atoms.
Almost same trend as reported by other researchers when they used oxide dopant like Al2O3, SiO2 and PbO [8, 9].
These include anodic passivation, surface ennobling, mediation of oxygen reduction, cathodic protection, barrier protection after initial galvanic coupling, and an intelligent dopant release mechanism.
Several epitaxial layers with different dopant doping levels were deposited on a silicon substrate by the vapour phase epitaxy.
The present research aim is to develop the new solid biopolymer electrolyte based on carboxymethyl cellulose (CMC) as the host natural polymer and ammonium thiocyanate (NH4SCN) as dopant salt.