p-type semiconductor

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p-type semiconductor

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A method of exploiting the solar spectrum more effectively was introduced by He et al [12] who placed dye-sensitized p-type semiconductor, giving photoelectrochemical response, as a substitute of a non photoactive cathode of a conventional DSC [13].
The comparison of test results shows that the performance of PD-type ILC is better than P-type ILC for VLC, due to the delay of vehicle longitudinal dynamics.
Tiwari, CuBO2: A p-type transparent oxide, Applied Physics Letters, 91 (2007) 92123 92125.
In this part, p-n junction was formed by synthesizing the n-type gel on the top of shortly before synthesized p-type gel.
The study conclusively showed that the sporadic distribution of SNBPs of the protamine P-type within this group of vertebrates was not random.
By that standard, the device is twice as fast as previous experimental p-type transistors and almost four times as fast as the best commercial p-type transistors.
Metal wrap through (MWT): MWT wafers are effectively P-type wafers with approximately 16 uniformly drilled holes, which act as vias and conduct current from the front side of the cell through to the back side.
ALD-FET (Figure 1) is a field effect transistor in which the channel is formed by growing an n-type Si [delta]-doped well and a p-type [delta]-doped barrier.
The company has simplified installation and maintenance of the cartridge for the Mineline MHS Heavy-Duty Secondary Cleaner and added the feature to its P-Type Secondary Cleaner and R-Type Reversing Secondary Cleaner.
As a technical solution for it, Panasonic proposes a new technology called Blocking-Voltage-Boosting (BVB) structure which consists of selectively formed p-type regions on the surface of the Si substrates.
include chapters on the mechanical-thermal, chemical, and electrical properties of ZnO; techniques for the growth of ZnO and heterostructures; the optical properties of ZnO; doping methods, including p-type doping and doping with magnetic ions; ZnO bandgap engineering for high-performance electrical and optical devices; nanostructures based on ZnO and their fabrication; and ZnO processing for devices.
As a result, holes become the majority charge carrier; this is known as p-type doping.