p-type semiconductor

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p-type semiconductor

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semiconductor

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A method of exploiting the solar spectrum more effectively was introduced by He et al [12] who placed dye-sensitized p-type semiconductor, giving photoelectrochemical response, as a substitute of a non photoactive cathode of a conventional DSC [13].

Nickel Oxide Photocathodes Prepared Using Rapid Discharge Sintering for p-Type Dye-Sensitized Solar Cells

The comparison of test results shows that the performance of PD-type ILC is better than P-type ILC for VLC, due to the delay of vehicle longitudinal dynamics.

Vehicle longitudinal control algorithm based on iterative learning control

Tiwari, CuBO2: A p-type transparent oxide, Applied Physics Letters, 91 (2007) 92123 92125.

EFFECT OF LOW SINTERING TEMPERATURE TOWARDS PHASE TRANSITION AND OPTICAL PROPERTIES OF DELAFOSSITE CUBO2

In this part, p-n junction was formed by synthesizing the n-type gel on the top of shortly before synthesized p-type gel.

Synthesis of polyacrylamide hydrogels as p-n-junction with ionic charge carriers

The study conclusively showed that the sporadic distribution of SNBPs of the protamine P-type within this group of vertebrates was not random.

Sperm nuclear basic proteins of tunicates and the origin of protamines

By that standard, the device is twice as fast as previous experimental p-type transistors and almost four times as fast as the best commercial p-type transistors.

Now, basic component of all computer chips boasts highest 'carry mobility'

Metal wrap through (MWT): MWT wafers are effectively P-type wafers with approximately 16 uniformly drilled holes, which act as vias and conduct current from the front side of the cell through to the back side.

Solar stew: combining wafer technologies to yield satisfying results

ALD-FET (Figure 1) is a field effect transistor in which the channel is formed by growing an n-type Si [delta]-doped well and a p-type [delta]-doped barrier.

Transport and electronic properties of the GaAs ALD-FET

The company has simplified installation and maintenance of the cartridge for the Mineline MHS Heavy-Duty Secondary Cleaner and added the feature to its P-Type Secondary Cleaner and R-Type Reversing Secondary Cleaner.

Cartridge cleaners

As a technical solution for it, Panasonic proposes a new technology called Blocking-Voltage-Boosting (BVB) structure which consists of selectively formed p-type regions on the surface of the Si substrates.

Panasonic Develops a Gallium Nitride (GaN) Power Transistor on Silicon with Blocking-Voltage-Boosting Structure

include chapters on the mechanical-thermal, chemical, and electrical properties of ZnO; techniques for the growth of ZnO and heterostructures; the optical properties of ZnO; doping methods, including p-type doping and doping with magnetic ions; ZnO bandgap engineering for high-performance electrical and optical devices; nanostructures based on ZnO and their fabrication; and ZnO processing for devices.

Zinc oxide; fundamentals, materials and device technology

As a result, holes become the majority charge carrier; this is known as p-type doping.