An experimental evaluation of the atomic photo effect cross section at K-edge can be carried out by an one of the following methods (i) measurement of K-X ray yield, following the ejection of photo electron, (ii) measurement of the photo electron intensities and (iii) extra polation method.
To supplement the data some of the atomic photo effect cross sections at different energies below K-edge were taken from the available literature (Veigele, 1973).
The atomic photo effect cross sections above and below the K-edge of each element were fitted by the method of least squares.
The plots above and below the K-edge extrapolated towards the K-edge.
The atomic photo effect cross sections of lower and upper K-edge values are presented in columns 3 and 4 respectively, along with the theoretical values (Storm and Isreal 1970; Scofield 1973).
It can be seen from the table-I that the upper and lower K-edge atomic photo effect cross sections from the present work agree with the values from the Scofield report (1973) with in the experimental errors.
Figure 1 shows the images of silicon nanowires prepared by the top-down and the bottom-up method, and the Si K-edge XAFS revealing the crystalline nature of the nanostructures.
Figure 3 shows the XEOL and the S K-edge (1 s threshold) optical XAFS of a soft-template (dendrimer)-anchored CdS QD.