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The growth of one crystal in one or more specific orientations on the substrate of another kind of crystal, with a close geometric fit between the networks in contact; seen in the alternating layers of different composition in stones from the kidney and gallbladder, indicating an abrupt change of composition during formation.
[epi- + G. taxis, arrangement]
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References in periodicals archive ?
(2) a fresh GaSb surface during epitaxial growth on a GaSb substrate/buffer without Sb stabilization (solid green line),
Yoon, "Epitaxial growth of low threading dislocation density InSb on GaAs using self-assembled periodic interfacial misfit dislocations," Materials Letters, vol.
As is known, the epitaxial growth of In-containing compounds on GaAs is affected by segregation, a phenomenon that may strongly change the effective composition profile of the structure [10].
When the N/Ga flux ratio kept decreasing for sample E, the growth condition (with N/Ga flux ratio = 45.8) favored the epitaxial growth of GaN to suppress the formation of [Li.sub.5]Ga[O.sub.4] during the growth.
Ordering of Conjugated Polymer Films by Epitaxial Growth during Spin-Coating.
At such high deposition rate, the evaporated Si atoms do not have enough time to move to some specific oriented seeds to get a faster epitaxial growth rate but stay at where they arrived at the seed layer surface.
The fourth-order parabolic equation in epitaxial growth of nanoscale equation is an important mathematical physical equation that has many practical meanings.
San Diego, CA, March 08, 2012 --(PR.com)-- In the most commonly used process for the production of blue spectrum chips- including white LEDs - gallium nitride-based semiconductor layers (GaN) are grown on sapphire substrate (Al2O3) using epitaxial growth methods like MOCVD.
The thermodynamic analysis of interactions between the quartz reactor, vaporized oxygen and melt gallium showed that the homogenization process of the melt gallium starts before the start of the epitaxial growth process only then when this environment is additionally doped with silicon atoms.
They cover silicon carbide (SiC) growth and epitaxial growth, physical properties and characteristics, nanostructures and graphene, processing, devices, and III-nitrides and other related materials.
A technological innovation--the Superconducting Wires by Epitaxial Growth on SSIFFS--developed at Oak Ridge National Laboratory, Oak Ridge, Tenn., has enabled the fabrication of a round or low-aspect ratio, single-crystal superconducting wire.