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A mineral found crystallized in a form that is not proper to it but to some other mineral.
[pseudo- + G. morphē, form]
References in periodicals archive ?
Within the realm of GaAs-based technology, the active channel layer may be selected from a wide variety of options, including: * conventional MESFET, using doped GaAs * HEMT, using undoped GaAs * pseudomorphic HEMT, with ternary compounds such as InGaAs
The SKY13309-370LF is a pseudomorphic high electron mobility transistor (pHEMT) gallium arsenide (GaAs) integrated circuit (IC) SP3T antenna switch operating in the LF-3 frequency range.
Enabled by the company's patent pending sixth-generation pseudomorphic high electron mobility transistor (pHEMT) process, the SKY13286-359LF is a gallium arsenide (GaAs) FET integrated circuit high isolation absorptive switch in a 4 mm X 4 mm 16-lead QFN with exposed pad plastic package.
Gronqvist, "A Balanced Millimeter-wave Doubler Based on Pseudomorphic HEMTs," 1992 IEEE International Microwave Symposium Digest, pp.
The SKY13402-466LF is a GaAs pseudomorphic high electron mobility transistor (pHEMT) single-pole, ten-throw (SP10T) antenna switch with an integrated mobility industry processor interface (MIPI) decoder and dual low-pass harmonic filters.
They are dull black, but most are partially coated by interlocking blades of lustrous red-brown, epitactic rutile (of the so-called "sagenite" habit), and a few plates seem to be nearly complete pseudomorphic replacements of hematite by rutile, overgrown, in turn, by a new generation of "sagenite.
The emergence of LDMOS and the re-emergence of the GaAs pseudomorphic high electron mobility transistor (PHEMT), as preferred technologies for high power in the 2 GHz, 3G base station sector, have also had an impact on the opportunities for high bandgap semiconductors.
has announced a high linearity E-pHEMT (enhancement-mode pseudomorphic high electron mobility transistor) field effect transistor (FET) designed for low noise, high dynamic range operation in cost-sensitive wire less infrastructure applications that operate between 450 MHz and 6 GHz.
Manufactured in TriQuint's high volume GaAs fabrication facility in Hillsboro, Oregon, TQP15 is the latest offering in TriQuint's well-established Pseudomorphic High Electron Mobility Transistor (pHEMT) process portfolio.
Readily available GaAs pseudomorphic high electron mobility transistor (pHEMT) MMICs, covering 2 to 20 GHz, have breakdown voltages typically less than 20 V, resulting in about 0.
At 2 GHz, Agilent's single-voltage operation ATF E-pHEMT (enhancement-mode pseudomorphic high electron mobility transistor) FET (field effect transistor) features +30 dBm output power at 1 dB gain compression, +41.