pseudomorph

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pseu·do·morph

(sū'dō-mōrf),
A mineral found crystallized in a form that is not proper to it but to some other mineral.
[pseudo- + G. morphē, form]
References in periodicals archive ?
The SKY13309-370 LF is a pseudomorphic high electron mobility transistor (pHEMT) gallium arsenide (GaAs) integrated circuit (IC) single-pole, three-throw (SP3T) antenna switch operating in the LF-3 gigahertz (GHz) frequency range.
Motorola's new MHW9187 advanced high-output power doubler was designed with Motorola's proprietary HVPHEMT 2 (High Voltage Pseudomorphic High Electron Mobility Transistor) process.
Motorola's advanced E-mode GaAs technology provides advantages over depletion-mode pseudomorphic high electron mobility transistor (pHEMT) devices," said Karl Johnson, director of Motorola's Compound Semiconductor Technologies Laboratory.
0 GHz) are gallium arsenide (GaAs) enhancement mode pseudomorphic high electron mobility transistor (pHEMT) LNAs designed for low noise figure down to 0.
17 om gate Pseudomorphic High Electron Mobility Transistor (PHEMT) process.
The newly introduced switch, ASM and FEM devices rely on state-of-the-art pseudomorphic high electron mobility transistor (pHEMT), SOI, integrated passive device (IPD), and wafer-level chip-scale package (WL-CSP) SAW technologies.
The module consists of separate GSM850/900 and DCS1800/PCS1900 PA blocks, 50-ohm impedance-matched inputs and outputs, TX harmonics filtering, high linearity and a low insertion loss pseudomorphic high electron mobility transistor (pHEMT) RF switch, and a PAC block with internal current sense resistor.
The PDK for the WIN PH50-00 GaAs enhancement/depletion-mode pseudomorphic high electron mobility transistor (pHEMT) and heterojunction bipolar transistor (HBT) foundry process is the latest in AWR's series of PDKs available to monolithic microwave integrated circuit (MMIC) designers.
NASDAQ: SWKS), an innovator of high reliability analog and mixed signal semiconductors enabling a broad range of end markets, today introduced a new suite of low noise amplifiers (LNAs) featuring pseudomorphic high electron mobility transistor (pHEMT) and silicon germanium (SiGe) technologies.
These new Pseudomorphic High Electron Mobility Transistor (pHEMT) processes utilize optical lithography technology to substantially reduce cost when compared to traditional E-beam based solutions.