p-type semiconductor

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p-type semiconductor

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A p-type semiconductor doesn't have enough electrons to balance out the positive charges of its atoms; as electrons hop back and forth between atoms, trying futilely to keep them electrically balanced, holes flow through the semiconductor, in much the way waves propagate across water molecules that locally move back and forth by very small distances.
Conceivable Recipe Options POP OR DUAL PRINT SELECTIVE EMITTER REAR SIDE PASSIVATION P-Type Yes Yes Yes n-Type Yes Yes Yes MWT Yes Yes Yes EWT No No Yes
The formation of comparably low resistive p-type CdTe films could be achieved by the abovementioned simple procedure, which could be used as in-line process back-contact for CdTe absorber layer in CdTe-based solar cells.
Transistors essentially consist a layer of an n-type semiconductor and a layer of a p-type semiconductor, connected to which are three electrodes known as the source, drain, and gate.
VP6 and NSP4) may play a role in the protective immunity against rotavirus infection; G12P[6] strains detected in the current study share neither G- nor P-type with either of the 2 current vaccines and could theoretically challenge vaccine efficacy.
In common with the rest of Atlet's new P-type trucks the Alto PS has an advanced-ergonomics tiller arm, with comfortable hand grips and easy-action fingertip controls, with proportional valves, which fall naturally to hand.
The parachutists will jump from the military drop height of 800ft and will be dressed in original Second World War wool trousers, Dennison smock and P-type parachute helmets to ensure an accurate portrayal of the landings.
One more detail: Depending on the types of material used, chip makers can produce N-type and P-type transistors on a CMOS chip.
Jaguar has also secured the P-Type and F-Type names.
A single CNT is positioned over gold electrodes to make a pair of p-type CNT field-effect transistors in series.
All previous carbon nanotube transistors have been p-type only.
P-N junction diodes were fabricated on samples obtained from two different wafers; (1) a complete HBT structure with an n (Si emitter), p (Si/Ge base), and an n/n+ (Si collector/sub-collector) deposited epitaxially (MBE) on a high resistivity p-Si substrate, (2) an HBT structure where epitaxial growth was terminated after the p-type base (Si/Ge) layer deposition.