epitaxy

(redirected from Epitaxial)
Also found in: Dictionary, Thesaurus, Encyclopedia, Wikipedia.
Related to Epitaxial: epitaxial transistor, epitaxial layer, Epitaxial growth

ep·i·tax·y

(ep'i-tak'sē),
The growth of one crystal in one or more specific orientations on the substrate of another kind of crystal, with a close geometric fit between the networks in contact; seen in the alternating layers of different composition in stones from the kidney and gallbladder, indicating an abrupt change of composition during formation.
[epi- + G. taxis, arrangement]
References in periodicals archive ?
Using the HGE technology, SDK has also succeeded in producing SiC epitaxial wafers with film thickness of 100um or more, having low levels of defect density and good uniformity.
5 wt%) together with two EPR materials (in the following referred to as rubbers A, iPP with 14 wt% ethylene, and B, iPP with 39 wt% ethylene) were chosen in order to evaluate the possibility of epitaxial crystallization for a total of four different matrix/rubber combinations: iPP/rubber A, iPP/rubber B, EP-copolymer/rubber A, and EP-copolymer/rubber B.
The most cost-effective and highest-capacity multi-4" production MBE system in the market today, the Veeco GEN200 Edge MBE System delivers superior throughput, long campaigns and excellent wafer quality in growing epitaxial wafers for custom devices.
SDK is planning to increase its SiC epitaxial wafer production capacity from 1,500 units a month (in terms of four-inch wafers) at present, to 2,500 units a month by the middle of 2014, contributing to the spread of SiC power devices.
While new materials such as GaN and SiC are now drawing attention of manufacturers, silicon epitaxial wafers still remain the core material for power semiconductors production due to low cost and reliability," said Epiel's CEO Vladimir Statsenko.
The Strategy Analytics forecast segments the SI GaAs epitaxial substrate market by diameter, geography, epitaxial processing technique, application and supplier.
The decline in GaAs epitaxial substrate production hit both MBE and MOCVD structures in 2012, but not equally", noted Eric Higham, Director of the Strategy Analytics GaAs and Compound Semiconductor Technologies Service (GaAs).
SiC epitaxial wafers are used in producing Schottky diodes, MOSFETs, JFETs, and BJTs over a wide voltage range and customized wafers for thyristors, GTOs and IGBTs over a wider voltage range for medium to very high voltage power conversion system applications.
SDK) has increased its four-inch silicon carbide (SiC) epitaxial wafer production capacity by 2.
Nasdaq: CREE) announces availability of high quality, low micropipe 150-mm 4H n-type silicon carbide (SiC) epitaxial wafers.
in an oxidizing atmosphere is to reduce on the semiconductor material silicon carbide (SiC) of defects in epitaxial layers and the SiC substrate very promising.
4 nm in roughness) all over the surface of its largest-size four-inch silicon carbide (SiC) epitaxial wafers on a commercial production basis.