Using the HGE technology, SDK has also succeeded in producing SiC epitaxial
wafers with film thickness of 100um or more, having low levels of defect density and good uniformity.
5 wt%) together with two EPR materials (in the following referred to as rubbers A, iPP with 14 wt% ethylene, and B, iPP with 39 wt% ethylene) were chosen in order to evaluate the possibility of epitaxial
crystallization for a total of four different matrix/rubber combinations: iPP/rubber A, iPP/rubber B, EP-copolymer/rubber A, and EP-copolymer/rubber B.
The most cost-effective and highest-capacity multi-4" production MBE system in the market today, the Veeco GEN200 Edge MBE System delivers superior throughput, long campaigns and excellent wafer quality in growing epitaxial
wafers for custom devices.
SDK is planning to increase its SiC epitaxial
wafer production capacity from 1,500 units a month (in terms of four-inch wafers) at present, to 2,500 units a month by the middle of 2014, contributing to the spread of SiC power devices.
While new materials such as GaN and SiC are now drawing attention of manufacturers, silicon epitaxial
wafers still remain the core material for power semiconductors production due to low cost and reliability," said Epiel's CEO Vladimir Statsenko.
The Strategy Analytics forecast segments the SI GaAs epitaxial
substrate market by diameter, geography, epitaxial
processing technique, application and supplier.
The decline in GaAs epitaxial
substrate production hit both MBE and MOCVD structures in 2012, but not equally", noted Eric Higham, Director of the Strategy Analytics GaAs and Compound Semiconductor Technologies Service (GaAs).
wafers are used in producing Schottky diodes, MOSFETs, JFETs, and BJTs over a wide voltage range and customized wafers for thyristors, GTOs and IGBTs over a wider voltage range for medium to very high voltage power conversion system applications.
SDK) has increased its four-inch silicon carbide (SiC) epitaxial
wafer production capacity by 2.
Nasdaq: CREE) announces availability of high quality, low micropipe 150-mm 4H n-type silicon carbide (SiC) epitaxial
in an oxidizing atmosphere is to reduce on the semiconductor material silicon carbide (SiC) of defects in epitaxial
layers and the SiC substrate very promising.
4 nm in roughness) all over the surface of its largest-size four-inch silicon carbide (SiC) epitaxial
wafers on a commercial production basis.