The measurement of the dielectric
constant requires specialized equipment .
2007) have investigated the dielectric
and electrical properties of in situ synthesized Pani in insulating epoxy matrix .
A rectangular dielectric
resonator antenna with relative permittivity of 36 was used to reduce the size of the antenna and the resulting impedance bandwidth was found to be 2.
The interconnect portion of an integrated circuit sits above the transistor level as stacks of metal wires buried in layers of dielectric
material, usually silicon dioxide.
Electronic Structure and Band Offsets of Alternative High-k Gate Dielectrics
The introduction of immersion lithography and ultra-low-K interconnect dielectrics
at 45nm is an early example of the successful transfer of technology from our ground-breaking research work at the Albany Nanotech Center to IBM's state-of-the-art 300mm manufacturing and development line at East Fishkill, New York, as well as AMD's state-of-the-art 300mm manufacturing line in Dresden, Germany," said Gary Patton, vice president, technology development at IBM's Semiconductor Research and Development Center.
In both high-k dielectric
and metal gate etch, Hitachi is having great success etching these materials with no chamber wall residue to cause defects.
Since the early nineties, the focus of the phase equilibrium studies of dielectrics
at NIST has been on ceramic materials that are for wireless microwave communication applications.
Silecs is the only supplier in its market that is purely dedicated to serving the dielectric
needs of semiconductor and display customers, and we believe that customers are finding that focus and dedication very attractive.
E[acute accent]SX 800 is an advanced organosiloxane dielectric
used in both BEOL and FEOL applications.
HSINCHU, Taiwan -- UMC (NYSE:UMC) (TSE:2303), a world leading semiconductor foundry, today announced that its research and development team has achieved a significant engineering milestone by shrinking the Equivalent Oxide Thickness (EOT) of nitrogen doped silicon oxide (Oxy-nitride, SiON) gate dielectrics
to approximately 1.
Kirtley has been involved with the dielectrics
industry since 1981, when he developed and commercialized the first spin-on glass (SOG) dielectrics
at Allied Signal (later merged with Honeywell).