The measurement of the dielectric
constant requires specialized equipment .
2007) have investigated the dielectric
and electrical properties of in situ synthesized Pani in insulating epoxy matrix .
The introduction of immersion lithography and ultra-low-K interconnect dielectrics
at 45nm is an early example of the successful transfer of technology from our ground-breaking research work at the Albany Nanotech Center to IBM's state-of-the-art 300mm manufacturing and development line at East Fishkill, New York, as well as AMD's state-of-the-art 300mm manufacturing line in Dresden, Germany," said Gary Patton, vice president, technology development at IBM's Semiconductor Research and Development Center.
diffusion barrier is a critical layer in the interconnect stack due to the role it plays in determining device reliability," said Kevin Jennings, senior vice president and general manager of Novellus' PECVD business unit.
In both high-k dielectric
and metal gate etch, Hitachi is having great success etching these materials with no chamber wall residue to cause defects.
E[acute accent]SX 800 is an advanced organosiloxane dielectric
used in both BEOL and FEOL applications.
Silecs provides solutions to some of the semiconductor industry's key technical problems and we believe that Silecs' dielectric
technologies will have a significant impact on the semiconductor industry's development.
The report will also include an overview, package and die photos, process, transistor, materials and dielectric
analysis, as well as critical die dimensions.
Infineon Technologies recently invested in Trikon's Planar(TM) 300 Flowfill(R) system for the deposition of inter-metal dielectrics
for advanced DRAM products.
Patent Office for a new multi-layer composite dielectric
film concept for improving electrical properties and thermal stability of gate dielectrics
in advanced semiconductor devices.
Tegal Corporation (Nasdaq:TGAL), a leading designer and manufacturer of plasma etch and deposition systems used in the production of integrated circuits and nanotechnology devices, and Sharp Laboratories of America have entered into an agreement to collaborate on a focused joint development program (JDP) to accelerate the adoption and integration of next generation high-K dielectrics
SIMS analysis shows that the intermetal dielectrics
include low-k (Applied Materials' Black Diamond) at the critical levels, FSG at the intermediate levels, and undoped glass at the power bus levels.